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IRFH5006TR2PBF Tech Specifications

MOSFET N-CH 60V 100A 5X6 PQFN

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-PQFN (5x6)
Published 2010
Part Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 3.6W
Number of Elements 1
Power Dissipation 3.6W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 150μA
Current - Continuous Drain (Id) @ 25°C 21A Ta 100A Tc
Rise Time 13ns
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 4.175nF
Drain to Source Resistance 4.1mOhm
Nominal Vgs 4 V
Length 6.1468mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Packaging Cut Tape (CT)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Element Configuration Single
Turn On Delay Time 9.6 ns
Rds On (Max) @ Id, Vgs 4.1mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4175pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 30 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 60V
Recovery Time 42 ns
Rds On Max 4.1 mΩ
Height 990.6μm
Width 5.15mm
REACH SVHC No SVHC
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IRFH5006TR2PBF Documents

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