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IRFHE4250DTRPBF Tech Specifications

MOSFET 2N-CH 25V 86A/303A PQFN

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 30
Packaging Tape & Reel (TR)
Series FASTIRFET™
Moisture Sensitivity Level (MSL) 2 (1 Year)
Subcategory FET General Purpose Power
Base Part Number IRFHE4250
Element Configuration Dual
Turn On Delay Time 17 ns
Rds On (Max) @ Id, Vgs 2.75m Ω @ 27A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1735pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Turn-Off Delay Time 24 ns
Threshold Voltage 1.6V
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 900μm
Width 5mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 32-PowerWFQFN
Operating Temperature -55°C~150°C TJ
Published 2004
Part Status Obsolete
ECCN Code EAR99
Max Power Dissipation 156W
Number of Elements 2
Power Dissipation 156W
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2.1V @ 35μA
Current - Continuous Drain (Id) @ 25°C 86A 303A
Rise Time 54ns
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 303A
Gate to Source Voltage (Vgs) 16V
FET Feature Logic Level Gate
Length 6mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRFHE4250DTRPBF Documents

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Others include   "IRFHE"   parts

The following parts include  'IRFHE' 

Part # Manufacturer Category Availability
IRFHE4250DTRPBF International Rectifier (Infineon Technologies) Transistors - FETs, MOSFETs - Arrays 2729

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