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IRFHM830DTR2PBF Tech Specifications

MOSFET N-CH 30V 20A PQFN

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-VQFN Exposed Pad
Packaging Digi-Reel®
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Max Power Dissipation 2.8W
Number of Elements 1
Turn On Delay Time 9.8 ns
Rds On (Max) @ Id, Vgs 4.3m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1797pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Fall Time (Typ) 6.7 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Recovery Time 24 ns
Height 990.6μm
Width 3.3mm
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Published 2013
Part Status Obsolete
ECCN Code EAR99
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation 37W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.35V @ 50μA
Current - Continuous Drain (Id) @ 25°C 20A Ta 40A Tc
Rise Time 20ns
Turn-Off Delay Time 9.1 ns
Threshold Voltage 1.8V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.8 V
Length 3.2766mm
Radiation Hardening No
RoHS Status RoHS Compliant
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