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IRFHM8326TRPBF Tech Specifications

IRFHM8326TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Active
Number of Terminations 5
Subcategory FET General Purpose Power
Terminal Position DUAL
JESD-30 Code S-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0067Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Power Dissipation-Max 2.8W Ta 37W Tc
Power Dissipation 2.8W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 50μA
Current - Continuous Drain (Id) @ 25°C 19A Ta
Rise Time 35ns
Vgs (Max) ±20V
Turn-Off Delay Time 18 ns
Threshold Voltage 1.7V
Drain Current-Max (Abs) (ID) 70A
Drain to Source Breakdown Voltage 30V
REACH SVHC No SVHC
Lead Free Lead Free
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IRFHM8326TRPBF Documents

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