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IRFHM9391TRPBF Tech Specifications

IRFHM9391TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Obsolete
Number of Terminations 5
Subcategory Other Transistors
Terminal Position DUAL
JESD-30 Code S-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.6W Ta
Power Dissipation 2.6W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 25μA
Current - Continuous Drain (Id) @ 25°C 11A Ta
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Avalanche Energy Rating (Eas) 75 mJ
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 14.6m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1543pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±25V
Turn-Off Delay Time 72 ns
Threshold Voltage -1.8V
Drain-source On Resistance-Max 0.0225Ohm
Pulsed Drain Current-Max (IDM) 90A
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRFHM9391TRPBF Documents

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