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IRFI4019HG-117P Tech Specifications

MOSFET 2N-CH 150V 8.7A TO-220FP

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-5 Full Pack (Formed Leads)
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 5
Additional Feature HIGH RELIABILITY
Max Power Dissipation 18W
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 95m Ω @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Rise Time 6.6ns
Fall Time (Typ) 3.1 ns
Continuous Drain Current (ID) 8.7A
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 77 mJ
FET Feature Standard
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2009
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Element Configuration Dual
Power Dissipation 18W
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.9V @ 50μA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 150V
Turn-Off Delay Time 13 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 34A
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
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IRFI4019HG-117P Documents

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