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IRFML8244TRPBF Tech Specifications

MOSFET N-CH 25V 5.8A SOT23

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Manufacturer Package Identifier Micro3
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 3
Resistance 41MOhm
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 24m Ω @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 2.9 ns
Continuous Drain Current (ID) 5.8A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 24A
Nominal Vgs 1.7 V
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 1.25W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 10μA
Current - Continuous Drain (Id) @ 25°C 5.8A Ta
Rise Time 2.1ns
Vgs (Max) ±20V
Turn-Off Delay Time 9 ns
Threshold Voltage 1.7V
Drain to Source Breakdown Voltage 25V
Recovery Time 17 ns
Height 1.02mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
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