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IRFP048NPBF Tech Specifications

MOSFET N-CH 55V 64A TO-247AC

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1997
Part Status Obsolete
Number of Terminations 3
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 55V
Current Rating 36A
Number of Elements 1
Element Configuration Single
Power Dissipation 130W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 64A Tc
Rise Time 78ns
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 270 mJ
Nominal Vgs 4 V
Length 15.875mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Bulk
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Lead Pitch 5.45mm
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 37A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 48 ns
Continuous Drain Current (ID) 64A
JEDEC-95 Code TO-247AC
Drain Current-Max (Abs) (ID) 62A
Dual Supply Voltage 55V
Recovery Time 140 ns
Height 20.3mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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