IRFP2907PBF Tech Specifications

IRFP2907PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 4.5MOhm
Voltage - Rated DC 75V
Current Rating 209A
Number of Channels 1
Element Configuration Single
Power Dissipation 470W
Turn On Delay Time 23 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 209A Tc
Rise Time 190ns
Vgs (Max) ±20V
Turn-Off Delay Time 130 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Dual Supply Voltage 75V
Max Junction Temperature (Tj) 175°C
Height 24.99mm
Width 5.3086mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 470W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 125A, 10V
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 620nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 130 ns
Continuous Drain Current (ID) 209A
JEDEC-95 Code TO-247AC
Drain Current-Max (Abs) (ID) 90A
Pulsed Drain Current-Max (IDM) 840A
Recovery Time 210 ns
Nominal Vgs 4 V
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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