IRFP4410ZPBF Tech Specifications

IRFP4410ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 230W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 58A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4820pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 57 ns
Continuous Drain Current (ID) 97A
JEDEC-95 Code TO-247AC
Drain-source On Resistance-Max 0.009Ohm
Dual Supply Voltage 100V
Recovery Time 57 ns
Height 20.7mm
Width 5.3086mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Bulk
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 230W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 150μA
Current - Continuous Drain (Id) @ 25°C 97A Tc
Rise Time 52ns
Vgs (Max) ±20V
Turn-Off Delay Time 43 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 242 mJ
Nominal Vgs 4 V
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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