IRFP4568PBF Tech Specifications

IRFP4568PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Terminal Finish MATTE TIN OVER NICKEL
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 30
Number of Channels 1
Element Configuration Single
Power Dissipation 517W
Turn On Delay Time 27 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 171A Tc
Rise Time 119ns
Vgs (Max) ±30V
Turn-Off Delay Time 47 ns
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Nominal Vgs 5 V
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 250
Number of Elements 1
Power Dissipation-Max 517W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.9m Ω @ 103A, 10V
Input Capacitance (Ciss) (Max) @ Vds 10470pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 227nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 84 ns
Continuous Drain Current (ID) 171A
JEDEC-95 Code TO-247AC
Drain-source On Resistance-Max 0.0059Ohm
Pulsed Drain Current-Max (IDM) 684A
Max Junction Temperature (Tj) 175°C
Height 24.99mm
Width 5.3086mm
REACH SVHC No SVHC
Lead Free Lead Free
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