IRFP7430PBF Tech Specifications

IRFP7430PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
Part Status Active
Number of Terminations 3
Resistance 1.3MOhm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 366W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 14240pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 460nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 100 ns
Continuous Drain Current (ID) 195A
JEDEC-95 Code TO-247AC
Drain to Source Breakdown Voltage 40V
Recovery Time 52 ns
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®, StrongIRFET™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 366W
Turn On Delay Time 32 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Rise Time 105ns
Vgs (Max) ±20V
Turn-Off Delay Time 160 ns
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 722 mJ
Height 20.7mm
Width 5.31mm
REACH SVHC No SVHC
Lead Free Lead Free
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