IRFPS3810PBF Tech Specifications

MOSFET N-CH 100V 170A SUPER247

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 25 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2002
Part Status Not For New Designs
Number of Terminations 3
Resistance 9Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 170A
Qualification Status Not Qualified
Power Dissipation-Max 580W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6790pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 140 ns
Continuous Drain Current (ID) 170A
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Nominal Vgs 5 V
Length 16.0782mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-274AA
Transistor Element Material SILICON
Packaging Bulk
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 100V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 441W
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 170A Tc
Rise Time 270ns
Vgs (Max) ±30V
Turn-Off Delay Time 45 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 670A
Recovery Time 330 ns
Height 20.8mm
Width 5.3mm
RoHS Status ROHS3 Compliant
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