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IRFR120NTRPBF Tech Specifications

MOSFET N-CH 100V 9.4A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 210mOhm
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 48W Tc
Power Dissipation 39W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.4A Tc
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 9.4A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 100V
Recovery Time 150 ns
Drain to Source Resistance 210mOhm
Nominal Vgs 4 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1998
Part Status Active
Termination SMD/SMT
Max Operating Temperature 175°C
Voltage - Rated DC 100V
Current Rating 9.1A
Number of Channels 1
Element Configuration Single
Turn On Delay Time 4.5 ns
Rds On (Max) @ Id, Vgs 210mOhm @ 5.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 100V
Input Capacitance 330pF
Max Junction Temperature (Tj) 175°C
Rds On Max 210 mΩ
Height 2.52mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRFR120NTRPBF Documents

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