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IRFR13N15DTR Tech Specifications

MOSFET N-CH 150V 14A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Published 2000
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 8.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 14A
Drain-source On Resistance-Max 0.18Ohm
Avalanche Energy Rating (Eas) 130 mJ
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 150V
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Current Rating 14A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 86W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 14A Tc
Rise Time 26ns
Vgs (Max) ±30V
JEDEC-95 Code TO-252AA
Pulsed Drain Current-Max (IDM) 56A
RoHS Status Non-RoHS Compliant
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