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IRFR18N15DTRPBF Tech Specifications

MOSFET N-CH 150V 18A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 2
Resistance 125mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 8.8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 18A Tc
Rise Time 25ns
Vgs (Max) ±30V
Turn-Off Delay Time 15 ns
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 72A
Avalanche Energy Rating (Eas) 200 mJ
Height 2.3876mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 150V
Terminal Form GULL WING
Current Rating 18A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 125m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 9.8 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Nominal Vgs 5.5 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRFR18N15DTRPBF Documents

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