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IRFR2607ZTRPBF Tech Specifications

MOSFET N-CH 75V 42A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Operating Temperature (Max) 175°C
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 50μA
Current - Continuous Drain (Id) @ 25°C 42A Tc
Drain to Source Voltage (Vdss) 75V
Drain Current-Max (Abs) (ID) 42A
Pulsed Drain Current-Max (IDM) 180A
Avalanche Energy Rating (Eas) 96 mJ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Number of Elements 1
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.022Ohm
DS Breakdown Voltage-Min 75V
Power Dissipation-Max (Abs) 110W
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IRFR2607ZTRPBF Documents

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