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IRFR3303TRPBF Tech Specifications

MOSFET N-CH 30V 33A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 2
Resistance 31mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 57W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 33A Tc
Rise Time 99ns
Vgs (Max) ±20V
Turn-Off Delay Time 16 ns
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 20A
Avalanche Energy Rating (Eas) 95 mJ
Length 6.7056mm
Radiation Hardening No
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC 30V
Terminal Form GULL WING
Current Rating 33A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 31m Ω @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 28 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Height 2.3876mm
Width 6.22mm
RoHS Status ROHS3 Compliant
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IRFR3303TRPBF Documents

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