IRFR3607TRPBF Tech Specifications

MOSFET N-CH 75V 56A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 140W Tc
Power Dissipation 140W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 100μA
Current - Continuous Drain (Id) @ 25°C 56A Tc
Rise Time 110ns
Vgs (Max) ±20V
Turn-Off Delay Time 43 ns
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Height 2.3876mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Resistance 9MOhm
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 46A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3070pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 96 ns
Continuous Drain Current (ID) 80mA
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 56A
Nominal Vgs 2 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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