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IRFR5305TRRPBF Tech Specifications

MOSFET P-CH 55V 31A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Min Operating Temperature -55°C
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -31A
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Turn-Off Delay Time 39 ns
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.065Ohm
Avalanche Energy Rating (Eas) 280 mJ
Length 10.3886mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 175°C
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -55V
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 110W Tc
Power Dissipation 110W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 31A Tc
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 63 ns
Continuous Drain Current (ID) -31A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Height 2.3876mm
Width 6.73mm
RoHS Status ROHS3 Compliant
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IRFR5305TRRPBF Documents

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