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IRFR7440TRPBF Tech Specifications

MOSFET N CH 40V 90A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 140W Tc
Power Dissipation 140W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 100μA
Current - Continuous Drain (Id) @ 25°C 90A Tc
Rise Time 39ns
Vgs (Max) ±20V
Turn-Off Delay Time 51 ns
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0024Ohm
Pulsed Drain Current-Max (IDM) 760A
Nominal Vgs 3 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 90A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4610pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 134nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 34 ns
Continuous Drain Current (ID) 180A
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 90A
Drain to Source Breakdown Voltage 40V
Max Junction Temperature (Tj) 175°C
Height 2.52mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRFR7440TRPBF Documents

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