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IRFS33N15DTRLP Tech Specifications

MOSFET N-CH 150V 33A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 2
Voltage - Rated DC 150V
Terminal Form GULL WING
Current Rating 33A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 170W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 56m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 33A
Drain-source On Resistance-Max 0.056Ohm
Radiation Hardening No
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2000
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 3.8W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 33A Tc
Rise Time 38ns
Vgs (Max) ±30V
Turn-Off Delay Time 23 ns
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
RoHS Status ROHS3 Compliant
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