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IRFS52N15DTRRP Tech Specifications

MOSFET N-CH 150V 51A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.8W Ta 230W Tc
Power Dissipation 3.8W
FET Type N-Channel
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 51A Tc
Rise Time 47ns
Vgs (Max) ±30V
Turn-Off Delay Time 28 ns
Gate to Source Voltage (Vgs) 30V
Height 4.826mm
Width 9.65mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Published 2010
Part Status Not For New Designs
ECCN Code EAR99
Number of Elements 1
Element Configuration Single
Turn On Delay Time 16 ns
Rds On (Max) @ Id, Vgs 32m Ω @ 36A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 51A
Drain to Source Breakdown Voltage 150V
Length 10.668mm
Radiation Hardening No
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IRFS52N15DTRRP Documents

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