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IRFSL3206PBF Tech Specifications

MOSFET N-CH 60V 120A TO-262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6540pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 83 ns
Continuous Drain Current (ID) 120A
Drain to Source Breakdown Voltage 60V
Height 9.65mm
Width 4.826mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 60V
Terminal Position SINGLE
Current Rating 210A
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 150μA
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 82ns
Vgs (Max) ±20V
Turn-Off Delay Time 55 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 840A
Length 10.668mm
Radiation Hardening No
Lead Free Lead Free
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