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IRFSL4227PBF Tech Specifications

MOSFET N-CH 200V 62A TO-262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 40
Power Dissipation-Max 330W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 46A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 31 ns
Continuous Drain Current (ID) 62A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 140 mJ
Height 9.65mm
Width 4.83mm
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 330W
Turn On Delay Time 33 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 62A Tc
Rise Time 20ns
Vgs (Max) ±30V
Turn-Off Delay Time 21 ns
Threshold Voltage 5V
Drain-source On Resistance-Max 0.026Ohm
Pulsed Drain Current-Max (IDM) 260A
Nominal Vgs 5 V
Length 10.67mm
Radiation Hardening No
RoHS Status RoHS Compliant
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