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IRFSL7430PBF Tech Specifications

MOSFET N-CH 40V 195A TO262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Part Status Active
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Threshold Voltage 3.9V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 2.084002g
Packaging Tube
Series HEXFET®, StrongIRFET™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Configuration Single
Power Dissipation-Max 375W Tc
Rds On (Max) @ Id, Vgs 1.2m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 14240pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 460nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Continuous Drain Current (ID) 195A
REACH SVHC No SVHC
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