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IRFSL7730PBF Tech Specifications

MOSFET N-CH 75V 195A TO262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2013
Part Status Active
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Channels 1
Element Configuration Single
FET Type N-Channel
Vgs(th) (Max) @ Id 3.7V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 115 ns
Continuous Drain Current (ID) 195A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084002g
Packaging Tube
Series HEXFET®, StrongIRFET™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 375W Tc
Turn On Delay Time 21 ns
Rds On (Max) @ Id, Vgs 2.6m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 13660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 407nC @ 10V
Drain to Source Voltage (Vdss) 75V
Vgs (Max) ±20V
Turn-Off Delay Time 180 ns
Gate to Source Voltage (Vgs) 20V
Lead Free Lead Free
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