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IRFU1018EPBF Tech Specifications

MOSFET N-CH 60V 56A I-PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
Resistance 8.4MOhm
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 100μA
Current - Continuous Drain (Id) @ 25°C 56A Tc
Rise Time 35ns
Vgs (Max) ±20V
Turn-Off Delay Time 55 ns
Threshold Voltage 4V
Drain Current-Max (Abs) (ID) 79A
Avalanche Energy Rating (Eas) 88 mJ
Height 6.22mm
Width 2.3876mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 47A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 46 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Recovery Time 39 ns
Length 6.7056mm
Radiation Hardening No
RoHS Status RoHS Compliant
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IRFU1018EPBF Documents

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