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IRFU2905ZPBF Tech Specifications

MOSFET N-CH 55V 42A I-PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package IPAK (TO-251)
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 110W Tc
Turn On Delay Time 14 ns
Rds On (Max) @ Id, Vgs 14.5mOhm @ 36A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Turn-Off Delay Time 31 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.38nF
Rds On Max 14.5 mΩ
Length 6.7056mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
Part Status Obsolete
Max Operating Temperature 175°C
Voltage - Rated DC 55V
Current Rating 42A
Power Dissipation 110W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 42A Tc
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 59A
Drain to Source Breakdown Voltage 55V
Drain to Source Resistance 14.5mOhm
Height 6.22mm
Width 2.3876mm
Lead Free Lead Free
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