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IRFU4104PBF Tech Specifications

MOSFET N-CH 40V 42A I-PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C~175°C TJ
Published 2010
Part Status Obsolete
Termination Through Hole
Technology MOSFET (Metal Oxide)
Lead Pitch 2.28mm
Power Dissipation-Max 140W Tc
Power Dissipation 140W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 42A Tc
Rise Time 69ns
Vgs (Max) ±20V
Turn-Off Delay Time 37 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 40V
Recovery Time 42 ns
Height 6.22mm
Width 2.3876mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 40V
Current Rating 119A
Lead Length 9.65mm
Element Configuration Single
Turn On Delay Time 17 ns
Rds On (Max) @ Id, Vgs 5.5m Ω @ 42A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 119A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 40V
Nominal Vgs 4 V
Length 6.7056mm
Radiation Hardening No
RoHS Status RoHS Compliant
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IRFU4104PBF Documents

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