IRFZ44NPBF Tech Specifications

IRFZ44NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 55V
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 49A Tc
Rise Time 60ns
Vgs (Max) ±20V
Turn-Off Delay Time 44 ns
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 55V
Nominal Vgs 2.1 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2001
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 17.5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 49A
Lead Pitch 2.54mm
Power Dissipation-Max 94W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 17.5m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) 49A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 55V
Recovery Time 95 ns
Height 8.77mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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