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IRFZ48ZSPBF Tech Specifications

MOSFET N-CH 55V 61A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Resistance 11MOhm
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Voltage - Rated DC 55V
Terminal Form GULL WING
Current Rating 61A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 91W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 61A Tc
Rise Time 69ns
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 120 mJ
Height 4.576mm
Width 9.652mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Power Dissipation-Max 91W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 37A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1720pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 39 ns
Continuous Drain Current (ID) 61A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 240A
Recovery Time 100 ns
Length 10.67mm
REACH SVHC No SVHC
Lead Free Lead Free
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