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IRG4BC10SD-SPBF Tech Specifications

IRG4BC10SD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 600V
Terminal Form GULL WING
Current Rating 14A
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 14A
Collector Emitter Breakdown Voltage 600V
Turn On Time 106 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A
Gate Charge 15nC
Td (on/off) @ 25°C 76ns/815ns
Height 4.699mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 38W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation 38W
Input Type Standard
Rise Time 36ns
Collector Emitter Voltage (VCEO) 1.8V
Reverse Recovery Time 28 ns
Collector Emitter Saturation Voltage 1.58V
Test Condition 480V, 8A, 100 Ω, 15V
Turn Off Time-Nom (toff) 1780 ns
Current - Collector Pulsed (Icm) 18A
Switching Energy 310μJ (on), 3.28mJ (off)
Length 10.668mm
Radiation Hardening No
RoHS Status RoHS Compliant
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