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IRG4BC20KDPBF Tech Specifications

IGBT 600V 16A 60W TO220AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 60W
Number of Elements 1
Power Dissipation 60W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Reverse Recovery Time 37 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 88 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 9A
Gate Charge 34nC
Td (on/off) @ 25°C 54ns/180ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 110ns
Length 10.5156mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Published 2000
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 600V
Current Rating 16A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 54 ns
Rise Time 34ns
Turn-Off Delay Time 180 ns
Max Collector Current 16A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.27V
Test Condition 480V, 9A, 50 Ω, 15V
Turn Off Time-Nom (toff) 380 ns
Current - Collector Pulsed (Icm) 32A
Switching Energy 340μJ (on), 300μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 8.77mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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IRG4BC20KDPBF Documents

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