IRG4BC30FD1 Tech Specifications

IRG4BC30FD1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2003
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Transistor Application POWER CONTROL
Reverse Recovery Time 46ns
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 46 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Gate Charge 57nC
Td (on/off) @ 25°C 22ns/250ns
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Case Connection COLLECTOR
Power - Max 100W
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Current - Collector (Ic) (Max) 31A
Test Condition 480V, 17A, 23 Ω, 15V
Turn Off Time-Nom (toff) 740 ns
Current - Collector Pulsed (Icm) 120A
Switching Energy 370μJ (on), 1.42mJ (off)
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IRG4BC30FD1 Documents

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