IRG4BC30FPBF Tech Specifications

IRG4BC30FPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Additional Feature FAST SPEED
Voltage - Rated DC 600V
Current Rating 31A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 21 ns
Rise Time 15ns
Turn-Off Delay Time 200 ns
Max Collector Current 31A
Collector Emitter Breakdown Voltage 600V
Turn On Time 36 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Gate Charge 51nC
Td (on/off) @ 25°C 21ns/200ns
Fall Time-Max (tf) 270ns
Length 10.54mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Number of Elements 1
Power Dissipation 100W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 1.59V
Test Condition 480V, 17A, 23 Ω, 15V
Turn Off Time-Nom (toff) 640 ns
Current - Collector Pulsed (Icm) 124A
Switching Energy 230μJ (on), 1.18mJ (off)
Height 8.77mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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