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IRG4BC30U-S Tech Specifications

IRG4BC30U-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 1998
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Number of Elements 1
Case Connection COLLECTOR
Power - Max 100W
Polarity/Channel Type N-CHANNEL
Current - Collector (Ic) (Max) 23A
Turn On Time 33 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Gate Charge 50nC
Td (on/off) @ 25°C 17ns/78ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 150ns
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Voltage - Collector Emitter Breakdown (Max) 600V
Power Dissipation-Max (Abs) 100W
Test Condition 480V, 12A, 23 Ω, 15V
Turn Off Time-Nom (toff) 320 ns
Current - Collector Pulsed (Icm) 92A
Switching Energy 160μJ (on), 200μJ (off)
Gate-Emitter Thr Voltage-Max 6V
RoHS Status Non-RoHS Compliant
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IRG4BC30U-S Documents

Download datasheets and manufacturer documentation for IRG4BC30U-S

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