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IRG4BC40W-STRRP Tech Specifications

IRG4BC40W-STRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Case Connection COLLECTOR
Power - Max 160W
Polarity/Channel Type N-CHANNEL
Max Collector Current 40A
Turn On Time 48 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Gate Charge 98nC
Td (on/off) @ 25°C 27ns/100ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 110ns
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 260.39037mg
Operating Temperature -55°C~150°C TJ
Published 2004
Part Status Last Time Buy
Number of Terminations 2
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 160W
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2.5V
Collector Emitter Breakdown Voltage 600V
Test Condition 480V, 20A, 10 Ω, 15V
Turn Off Time-Nom (toff) 294 ns
Current - Collector Pulsed (Icm) 160A
Switching Energy 110μJ (on), 230μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
Lead Free Lead Free
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IRG4BC40W-STRRP Documents

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