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IRG4BC40WPBF Tech Specifications

IGBT 600V 40A 160W TO220AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 40A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 27 ns
Rise Time 22ns
Turn-Off Delay Time 100 ns
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Input Capacitance 1.9nF
Test Condition 480V, 20A, 10 Ω, 15V
Turn Off Time-Nom (toff) 174 ns
Current - Collector Pulsed (Icm) 160A
Switching Energy 110μJ (on), 230μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 8.77mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Part Status Last Time Buy
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 160W
Number of Elements 1
Power Dissipation 160W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.5V
Turn On Time 49 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Gate Charge 98nC
Td (on/off) @ 25°C 27ns/100ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 110ns
Length 10.54mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRG4BC40WPBF Documents

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