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IRG4IBC20KDPBF Tech Specifications

IGBT 600V 11.5A 34W TO220FP

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Part Status Last Time Buy
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 34W
Number of Elements 1
Power Dissipation 34W
Input Type Standard
Rise Time 34ns
Collector Emitter Voltage (VCEO) 2.8V
Reverse Recovery Time 37 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 88 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 9A
Gate Charge 34nC
Td (on/off) @ 25°C 54ns/180ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 110ns
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.299997g
Operating Temperature -55°C~150°C TJ
Published 2003
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 600V
Current Rating 11.5A
Element Configuration Single
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 11.5A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.8V
Test Condition 480V, 9A, 50 Ω, 15V
Turn Off Time-Nom (toff) 380 ns
Current - Collector Pulsed (Icm) 23A
Switching Energy 340μJ (on), 300μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 9.02mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRG4IBC20KDPBF Documents

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