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IRG4IBC20WPBF Tech Specifications

IRG4IBC20WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2004
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Terminal Position SINGLE
Number of Elements 1
Power Dissipation 34W
Input Type Standard
Rise Time 14ns
Collector Emitter Voltage (VCEO) 2.6V
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.16V
Test Condition 480V, 6.5A, 50 Ω, 15V
Turn Off Time-Nom (toff) 300 ns
Current - Collector Pulsed (Icm) 52A
Switching Energy 60μJ (on), 80μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 14.224mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 34W
Current Rating 11.8A
Element Configuration Dual
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 12A
Collector Emitter Breakdown Voltage 600V
Turn On Time 36 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Gate Charge 26nC
Td (on/off) @ 25°C 22ns/110ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 96ns
Length 10.7442mm
Radiation Hardening No
RoHS Status RoHS Compliant
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IRG4IBC20WPBF Documents

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