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IRG4PC30FDPBF Tech Specifications

IRG4PC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
Part Status Last Time Buy
Number of Terminations 3
Additional Feature FAST SWITCHING, ULTRA FAST SOFT RECOVERY
Voltage - Rated DC 600V
Current Rating 31A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 42 ns
Rise Time 26ns
Turn-Off Delay Time 230 ns
Max Collector Current 31A
JEDEC-95 Code TO-247AC
Collector Emitter Saturation Voltage 1.99V
Test Condition 480V, 17A, 23 Ω, 15V
Max Junction Temperature (Tj) 150°C
Turn Off Time-Nom (toff) 620 ns
Current - Collector Pulsed (Icm) 120A
Switching Energy 630μJ (on), 1.39mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Length 15.875mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Published 2000
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Number of Elements 1
Power Dissipation 100W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 69 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Continuous Collector Current 31A
Gate Charge 51nC
Td (on/off) @ 25°C 42ns/230ns
Gate-Emitter Voltage-Max 20V
Height 24.99mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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IRG4PC30FDPBF Documents

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