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IRG4PC50KPBF Tech Specifications

IRG4PC50KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Current Rating 52A
Number of Elements 1
Power Dissipation 200W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
JEDEC-95 Code TO-247AC
Collector Emitter Saturation Voltage 1.84V
Test Condition 480V, 30A, 5 Ω, 15V
Turn Off Time-Nom (toff) 430 ns
Current - Collector Pulsed (Icm) 104A
Switching Energy 490μJ (on), 680μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 20.3mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 38 ns
Rise Time 34ns
Turn-Off Delay Time 160 ns
Max Collector Current 52A
Collector Emitter Breakdown Voltage 600V
Turn On Time 72 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A
Gate Charge 200nC
Td (on/off) @ 25°C 38ns/160ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 120ns
Length 15.875mm
Radiation Hardening No
RoHS Status RoHS Compliant
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