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IRG4PH50UDPBF Tech Specifications

IGBT 1200V 45A 200W TO247AC

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
Part Status Last Time Buy
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA FAST
Max Power Dissipation 200W
Number of Elements 1
Power Dissipation 200W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.7V
Reverse Recovery Time 90 ns
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 3.7V
Test Condition 800V, 24A, 5 Ω, 15V
Turn Off Time-Nom (toff) 570 ns
Current - Collector Pulsed (Icm) 180A
Switching Energy 2.1mJ (on), 1.5mJ (off)
Length 15.875mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 1.2kV
Current Rating 45A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 47 ns
Rise Time 24ns
Turn-Off Delay Time 110 ns
Max Collector Current 45A
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 73 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 24A
Gate Charge 160nC
Td (on/off) @ 25°C 47ns/110ns
Height 20.3mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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IRG4PH50UDPBF Documents

Download datasheets and manufacturer documentation for IRG4PH50UDPBF

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