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IRG4PSH71KDPBF Tech Specifications

IRG4PSH71KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 1999
Part Status Last Time Buy
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Element Configuration Single
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 78A
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.97V
Test Condition 800V, 42A, 5 Ω, 15V
Turn Off Time-Nom (toff) 660 ns
Current - Collector Pulsed (Icm) 156A
Switching Energy 5.68mJ (on), 3.23mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 20.8mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-274AA
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 350W
Current Rating 78A
Number of Elements 1
Power Dissipation 350W
Input Type Standard
Rise Time 84ns
Collector Emitter Voltage (VCEO) 3.9V
Reverse Recovery Time 107 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 152 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 42A
Gate Charge 410nC
Td (on/off) @ 25°C 67ns/230ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 190ns
Length 16.0782mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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