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IRG4RC20FPBF Tech Specifications

IGBT 600V 22A 66W DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2001
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
JEDEC-95 Code TO-252AA
Current - Collector (Ic) (Max) 22A
Turn On Time 51 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Gate Charge 27nC
Td (on/off) @ 25°C 26ns/194ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 340ns
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number IRG4RC20FPBF
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 66W
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Power Dissipation-Max (Abs) 66W
Test Condition 480V, 12A, 50 Ω, 15V
Turn Off Time-Nom (toff) 706 ns
Current - Collector Pulsed (Icm) 44A
Switching Energy 190μJ (on), 920μJ (off)
Gate-Emitter Thr Voltage-Max 6V
RoHS Status RoHS Compliant
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IRG4RC20FPBF Documents

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