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IRG7PSH50UDPBF Tech Specifications

IRG7PSH50UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSFM-T3
Rise Time-Max 60ns
Case Connection COLLECTOR
Power - Max 462W
Polarity/Channel Type N-CHANNEL
Max Collector Current 116A
Collector Emitter Breakdown Voltage 1.2kV
Turn On Time 70 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
IGBT Type Trench
Current - Collector Pulsed (Icm) 150A
Switching Energy 3.6mJ (on), 2.2mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 247
Operating Temperature -55°C~150°C TJ
Published 2010
Part Status Obsolete
Number of Terminations 3
Terminal Finish MATTE TIN OVER NICKEL
Max Power Dissipation 462W
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2V
Reverse Recovery Time 190 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 50A, 5 Ω, 15V
Turn Off Time-Nom (toff) 650 ns
Gate Charge 440nC
Td (on/off) @ 25°C 35ns/430ns
Gate-Emitter Voltage-Max 30V
Fall Time-Max (tf) 65ns
RoHS Status RoHS Compliant
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IRG7PSH50UDPBF Documents

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