IRG8CH15K10F Tech Specifications

IRG8CH15K10F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case Die
Packaging Bulk
Moisture Sensitivity Level (MSL) Not Applicable
Input Type Standard
Collector Emitter Voltage (VCEO) 2V
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
Td (on/off) @ 25°C 15ns/170ns
Gate-Emitter Thr Voltage-Max 6.5V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Operating Temperature -40°C~175°C TJ
Part Status Obsolete
Subcategory Insulated Gate BIP Transistors
Polarity/Channel Type N-CHANNEL
Collector Emitter Breakdown Voltage 1.2kV
Test Condition 600V, 10A, 10 Ω, 15V
Gate Charge 65nC
Gate-Emitter Voltage-Max 30V
RoHS Status RoHS Compliant
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IRG8CH15K10F Documents

Download datasheets and manufacturer documentation for IRG8CH15K10F

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