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IRGB4059DPBF Tech Specifications

IGBT 600V 8A 56W TO220AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Published 2001
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Additional Feature ULTRA FAST SOFT RECOVERY
Max Power Dissipation 56W
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 25 ns
Rise Time 10ns
Turn-Off Delay Time 65 ns
Max Collector Current 8A
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 35 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 4A
IGBT Type Trench
Current - Collector Pulsed (Icm) 16A
Switching Energy 35μJ (on), 75μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 9.02mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Power Dissipation 56W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.05V
Reverse Recovery Time 55 ns
Collector Emitter Breakdown Voltage 2.2V
Collector Emitter Saturation Voltage 1.75V
Test Condition 400V, 4A, 100 Ω, 15V
Turn Off Time-Nom (toff) 120 ns
Gate Charge 9nC
Td (on/off) @ 25°C 25ns/65ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 20ns
Length 10.66mm
Radiation Hardening No
RoHS Status RoHS Compliant
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IRGB4059DPBF Documents

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