IRGB6B60KDPBF Tech Specifications

IRGB6B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2004
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 90W
Number of Elements 1
Power Dissipation 90W
Input Type Standard
Rise Time 17ns
Collector Emitter Voltage (VCEO) 2.2V
Reverse Recovery Time 70 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 45 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
IGBT Type NPT
Current - Collector Pulsed (Icm) 26A
Switching Energy 110μJ (on), 135μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Height 15.24mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Part Status Last Time Buy
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 600V
Current Rating 13A
Element Configuration Single
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 13A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 1.8V
Test Condition 400V, 5A, 100 Ω, 15V
Turn Off Time-Nom (toff) 258 ns
Gate Charge 18.2nC
Td (on/off) @ 25°C 25ns/215ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 27ns
Length 10.54mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRGB6B60KDPBF Documents

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